Q1. the crystal structure of silicon ia
(A) body central cubic
(B) simple cubic
(C) force cenyered cubic
(D) diamond

Q2. which photo conductor is commonly used?
(A) PbS
(B) CdS
(C) Ga As
(D) As Bs

Q3. The crystal structure of silicon is
(A) Diamond
(B) Simple cubic
(C) Body central cubic
(D) Force centred cubic

Q4. early effect in BJT is caused by
(A) fast turn on
(B) fast turn off
(C) large collector base reverse bias
(D) none

Q5. secondary breakdown occurs in
(A) MOSFET
(B) MOSFET AND BJT
(C) BJT
(D) NONE

Q6. In JFET drain current is maximum when VGS is
(A) Zero
(B) Negative
(C) Positive
(D) one

Q7. The energy gap in a semiconductor
(A) decrease with temperature
(B) slightly increase with temperature
(C) remains constant
(D) increases with temperature

Q8. Mobility of electrons is highest in
(A) Ge
(B) Si
(C) C
(D) GaAs

Q9. PIN diode acts as .... when forward biased
(A) resistor
(B) variable resistor
(C) capacitor
(D) variable capacitor

Q10. In ideal, the equivalent of FET contains
(A) a current source between drain and source terminals
(B) a current source between drain and gate
(C) a voltage source between drain and source
(D) none of these

Q11. Which device is usually used as stable reference voltage in linear voltage regulator?
(A) p n diode
(B) varactor diode
(C) zener diode
(D) PIN diode

Q12. Which of the following device exhibits differential negative resistance?
(A) Zener Diode
(B) Schottky Diode
(C) LED
(D) Tunnel Diode

Q13. Which one of following device operates by transfer electron mechanism?
(A) Tunnel diode
(B) Gunn diode
(C) pin diode
(D) schottky diode

Q14. SCR is a
(A) 3 terminal 4 layer 3 junction unidirectional uncontrolled switch
(B) 3 terminal 4 layer 3 junction bidirectional controlled switch
(C) 3 terminal 3 layer 4 junction unidirectional controlled switch
(D) 3 terminal 4 layer 3 junction unidirectional controlled switch

Q15. In a thyristor, ratio of Latching current to holding current is
(A) 1
(B) 3
(C) 2.5
(D) 1.5

Q16. In a thyristor holding current is
(A) Less than Latching current
(B) More than Latching current
(C) Equal to Latching current
(D) Very small

Q17. the transconductance curve of a JFET is
(A) inverted V-type
(B) hyperbolic
(C) parabolic
(D) a straight line

Q18. common drain amplifier is a
(A) source follower
(B) cascade amplifier
(C) gate follower
(D) drain follower

Q19. Which of the following is fastest semiconductor
(A) Silicon
(B) Silver
(C) GaAs
(D) Germanium

Q20. At 0K temperature semiconductor behaves like a.........
(A) conductor
(B) insulator
(C) either conductor or insulator
(D) none of the above

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