Q1. A D-MOSFET can operate in the
(A) Depletion-mode only
(B) Enhancement-mode only
(C) Depletion-mode or enhancement-mode
(D) Low-impedance


Q2. The extremely high input impedance of a MOSFET is primarily due to the
(A) absence of its channel
(B) negative gate-source voltage
(C) depletion of current carriers
(D) extremely small leakage current of its gate capacitor


Q3. A JFET is a driven by
(A) current
(B) voltage
(C) both current and voltage
(D) none of the above


Q4. A depletion MOSFET differs from a JFET in the sense that it has no
(A) channel
(B) gate
(C) P-N junction
(D) Substrate


Q5. IGFET is a
(A) Square-law device
(B) Half-power device
(C) Linear device
(D) All of these


Q6. In a MOSFET, the polarity of the inversion layer is the same as that of the
(A) charge on the gate electrode
(B) minority carriers in the drain
(C) majority carries in the substrate
(D) majority carries in the source/drain


Q7. The operation of JFET is similar to the valve
(A) diode
(B) pentode
(C) triode
(D) tetrode


Q8. In MOSFET devices the N-channel type is better than P-channel type in the following respects
(A) it has better noise immunity
(B) it is faster
(C) it is TTL compatible
(D) it has better drive capability


Q9. MOSFET uses the electric field of
(A) gate capacitance to control the channel current
(B) barrier potential of p-n junction to control the channel current
(C) both of these
(D) none of these


Q10. Input impedance of MOSSFET is
(A) less than that of FET but more than BJT
(B) more than that of FET and BJT
(C) more than that of FET but less than BJT
(D) less than that of FET and BJT


Q11. A JFET has three terminals, namely
(A) cathode, anode, grid
(B) emitter, base, collector
(C) source, drain, gate
(D) none of these


Q12. A JFET has three terminals, namely
(A) cathode, anode, grid
(B) emitter, base, collector
(C) source, drain, gate
(D) none of these


Q13. Another name for zenar diode is
(A) voltage
(B) current
(C) power
(D) breakdown


Q14. FET is a
(A) Current controlled device
(B) Voltage controlled device
(C) Both
(D) None


Q15. FET is
(A) Bipolar
(B) Unipolar
(C) Polar
(D) None


Q16. A SCHOTTKY diode is a
(A) Majority carrier
(B) Minority carrier
(C) Fast recovery diode
(D) Both majority and a minority carrier diode


Q17. What is SCR
(A) series controlled rectifier
(B) serial controlled rectifier
(C) silicon controlled rectifier
(D) none of these


Q18. what is UJT
(A) uni directional device
(B) bi directional device
(C) tri directional device
(D) none of these


Q19. once scr start conducting a forward current, its gate losed control over
(A) amode circuit voltage only
(B) anode circuit current only
(C) anode circuit voltage and current
(D) anode circuit voltage ,current and time


Q20. A JFET is a
(A) Tripolar
(B) unipolar
(C) bipolar
(D) none of these


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